International Rectifier (IR) has launched the DirectFETplus family of power MOSFETs, leveraging its next-generation silicon technology to deliver optimal efficiency for 12V input synchronous buck applications. These devices are designed for next-generation servers, desktops, and notebooks, offering improved performance in compact form factors.
The IR F6811 and IRF6894 are the first members of the DirectFETplus series. They feature significantly reduced on-resistance (RDS(on)) and gate charge (Qg) compared to earlier models, leading to a 2% improvement in overall system efficiency. Additionally, these MOSFETs have ultra-low gate resistance (Rg), which helps minimize switching losses in DC-DC converters, further enhancing performance.
Pan Dawei, Vice President of Sales for IR Asia Pacific, commented, "The new IRF6811 and IRF6894 chipsets utilize IR's DirectFET packaging technology combined with our advanced silicon process to optimize critical MOSFET parameters. This ensures superior performance, reliability, and an ideal solution for space-constrained designs in next-generation computing systems."
The IRF6811 is a control MOSFET, while the IRF6894 is a synchronous MOSFET, available in small and medium packages respectively. The 25V DirectFETplus components combine industry-leading RDS(on) and Qg with low gate charge to reduce both conduction and switching losses. The IRF6894 also includes an integrated monolithic Schottky diode, which minimizes losses caused by body diode conduction and reverse recovery. Notably, the new DirectFETplus MOSFETs maintain compatibility with the footprint of previous generations, making them easy to integrate into existing designs.
With their enhanced efficiency, smaller size, and improved thermal performance, the DirectFETplus family is set to become a key component in modern power management solutions. Whether it’s for high-performance computing or energy-efficient electronics, these MOSFETs offer a compelling upgrade path for engineers looking to push the limits of power delivery.
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