Vishay's TrenchFET Gen III P-Channel Power MOSFETs have very low on-resistance

Vishay Intertechnology, Inc. (NYSE: VSH) recently announced the expansion of its ultra-small PowerPAK SC-70 package TrenchFET Gen III P-channel MOSFET lineup. This new generation of power MOSFETs is specifically designed to save space and improve efficiency in portable electronics. With a compact footprint of just 2mm x 2mm, these devices offer exceptional performance, including an on-resistance as low as 13mΩ at -4.5V gate drive for the -12V SiA467EDJ model. The SiA467EDJ is ideal for load and battery switches in power management systems, as well as control switches in synchronous buck conversion applications found in smartphones, tablets, mobile computing devices, hard drives, and solid-state drives. It provides a very low on-resistance of 13mΩ at -4.5V, while the SiA437DJ offers 14.5mΩ under the same conditions. The -30V SiA449DJ and SiA483DJ models have on-resistances of 20mΩ and 21mΩ respectively at -10V gate drive. These MOSFETs are also capable of handling large inrush currents, making them suitable for demanding load switch applications. The low on-resistance of these devices helps reduce voltage drops in circuits, leading to improved power efficiency and longer battery life. Additionally, their ultra-small PowerPAK SC-70 package saves critical board space in compact designs. The P-channel technology used in these MOSFETs eliminates the need for level-shifting circuits or "bootstrap" components, simplifying gate drive design in point-of-load (POL) DC/DC and other synchronous buck applications. All four models—SiA467EDJ, SiA437DJ, SiA449DJ, and SiA483DJ—have been fully tested at 100% Rg. They comply with JEDEC JS709A halogen-free regulations and are RoHS compliant according to the 2011/65/EU directive. You can now order samples and production quantities of these MOSFETs, with lead times ranging from 12 to 14 weeks for larger orders. For more details, refer to the device specification sheet below.

Modular Plug

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Modular Plug

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