Infineon unveiled the 2015 application power electronics conference with a combination of energy-efficient enhancement mode and cascode-configured silicon substrate GaN platform

Infineon Technologies AG has recently expanded its silicon-based gallium nitride (GaN) technology and product lineup, reinforcing its position as a key player in the fast-growing GaN market. The company now offers enhanced mode and cascaded GaN platforms, optimized for high-performance applications such as server power supplies, telecom equipment, mobile charging solutions, and consumer electronics like Class D audio systems. By leveraging GaN technology, power supplies can be made significantly smaller and lighter, opening up new possibilities for ultra-thin devices such as LED TVs. Andreas Urschitz, President of Power Management and Diversification Markets at Infineon, stated, "With our silicon-based GaN product portfolio, combined with the acquisition of General Motors’ GaN platform and our partnership with Matsushita Electric Co., Ltd., we have solidified our leadership in the GaN market. Our 'from product to system' strategy allows customers to choose between enhanced mode or cascode configurations based on their specific system needs. Additionally, we are actively developing surface mount devices (SMDs) and integrated circuits (ICs) to further enhance the compactness and performance of GaN technology. For example, laptop chargers could become up to 75% smaller thanks to this innovation." Infineon’s expanded product range includes specialized driver and controller ICs that help maximize the benefits of GaN in various topologies and higher frequencies. The acquisition of International Rectifier has also strengthened Infineon’s patent portfolio and advanced its silicon-based GaN epitaxial process, along with 100V–600V technology. Through a strategic collaboration with Matsushita Electric Industrial Co., Ltd., the two companies are jointly launching a normally-on (enhanced mode) silicon-based GaN transistor structure paired with Infineon’s SMD packaging. This results in an easy-to-use, energy-efficient 600V GaN power device that provides customers with added convenience and flexibility. Infineon continues to provide comprehensive system knowledge and one of the most extensive GaN technology portfolios in the industry. Furthermore, the company is offering normally-on GaN power devices in SMD packages, backed by superior manufacturing processes, mass production capabilities, and secondary sourcing options. Compared to traditional silicon-based solutions, silicon-based GaN technology improves power density and energy efficiency while reducing the size of components. This makes it ideal for use in consumer electronics like TV power supplies and Class D amplifiers, as well as in servers and telecom equipment. According to a report by IHS, the market for silicon-based GaN power semiconductors is expected to grow at a compound annual growth rate (CAGR) of over 50%. By 2023, the market is projected to expand from $150 million in 2014 to $800 million. At the Applied Power Electronics Conference and Exhibition (APEC) in Charlotte, North Carolina, from March 15 to 19, 2015, Infineon and Matsushita Electric demonstrated 600V 70mΩ device samples in DSO packages. Enhanced mode and cascode configuration devices were also showcased. Customers interested in these samples can obtain them under a non-disclosure agreement (NDA). Fully commercialized GaN devices with medium-voltage cascode structures are already available for Class D audio system customers.

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