Zhongwei Company pushes next-generation etching equipment for chip processing of 22nm and below

[High-tech LED News] Recently, China Micro-Semiconductor Equipment (Shanghai) Co., Ltd. (hereinafter referred to as "Zhongwei") released the second generation 300mm VHF decoupling reactive ion etching equipment for 22nm and below chips production. Primo AD-RIETM. The product will be shipped in Q3 this year, and China Micro revealed that the first Primo AD-RIE will enter a certain chip foundry in Asia.

Zhongwei pointed out that the new products are similar to the previous generation. Compared with the industry standards, Primo AD-RIE achieves a capital efficiency gain of 35% to 50%, a 20% to 40% reduction in total cost of ownership, and a more compact product design. The footprint is at least 30% smaller than the largest equipment of its kind, making the Primo AD-RIE the most advanced etching equipment with the highest yield and lowest production cost in the current semiconductor equipment market.

It is reported that China Micro has more than 30 devices to enter nine customers in Asia, including the world's top wafer manufacturers. In order to further meet market demand, China Micro is expanding its production capacity in China. This year, China Micro will complete the establishment of new assembly and test facilities in Zhunan, Taiwan.

According to China Micro, its new second-generation etching equipment has applied more technological innovations including: advanced RF system to ensure the stability and repeatability of the etching process, better tuning ability to ensure ultra-fine Key size uniformity, better reaction interior wall materials to reduce defects to improve product yield.

The characteristics and advantages of the second generation of new products are mainly:

1. Decoupling reactive ion etching realizes independent control of ion concentration and ion energy;
2, unique VHF RF input and symmetrical distribution can ensure accurate control of repetitive results in high-volume production environments;
3. Plasma focusing with independent intellectual property rights makes the etching process more stable and reliable, and has a wider process window;
4. Independent RF generator of each reaction stage, separate control of uniformity of each reaction stage and etch end point control, so that each wafer can be etched in a separate reaction environment;
5. High-frequency RF powered from the bottom provides a stable, low-pressure, high-density plasma that maintains the integrity of the low-k material;
6. Self-isolated RF matching device with independent intellectual property rights, with fast, stable and reliable tuning ability;
7. The inner wall of the reaction chamber is made of high-purity and plasma-resistant special materials, and the best material processing process is developed, which greatly reduces the loss and minimizes the number of impurity particles;
8. Closed-loop control of direct heating of the upper electrode of the resistor provides accurate and rapid temperature control for continuous chip processing;
9. The cluster structure of the double-reactor reactor can be configured with up to six single-chip processing reactors, that is, to obtain a high output on a small footprint;
10. Modular system architecture makes installation and maintenance operations easier.

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